Comparison of Thermal Stress During Short-Circuit in Different Types of 1.2-kV SiC Transistors Based on Experiments and Simulations

The temperature evolution during a short-circuit (SC) fault in the dies of three different silicon carbide (SiC) 1200-V power devices is presented this article. Transient electrothermal simulations are performed based on reconstructed structure commercially available devices. reveal location hottest point each device. nonisothermal electrical analysis supports necessity to turn- off SC events rapidly protect immunity device after fault. also differences delay required depending their type. A thorough rise die SiC metal-oxide semiconductor field-effect transistors (MOSFET) presented, where maximum with regards cases and circuit characteristics presented. impact gate resistance, inductance, detection time, drain-source voltage, gate-source voltage considered.